The electrical and optical properties of siligraphene have been investigated in this paper using semi-classical Boltzmann equation and the WIEN2K code based on density functional theory. We studied two configurations of siligraphene (g-SiC3 and g-SiC7 with different concentration of Silicon); our results show that these two configurations are semiconductor materials with a direct band gap. We find that the electrical properties of siligraphene changes as a function of silicon concentration. We also compared optical properties of two structures of siligraphene and we found that the electrical properties increases as a function of silicon concentration and decreases as function of temperature.